| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-07-01 |
| タイトル |
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タイトル |
Distinguishing the EH1 and S1 defects in n-type 4H-SiC by Laplace DLTS |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Tihomir Kne?evi?
Tomislav Brodar
Vladimir Radulovi?
Luka Snoj
牧野 高紘
Ivana Capan
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We report on the low-energy electron and fast neutron irradiated 4H-SiC studied by deep-level transient spectroscopy (DLTS) and Laplace DLTS. Irradiations introduced two defects, Ec?0.4 eV and Ec?0.7 eV. They were previously assigned to carbon interstitial (Ci) labeled as EH1/3 and silicon-vacancy (VSi) labeled as S1/2, for the low-energy electron and fast neutron irradiation, respectively. This work demonstrates how Laplace DLTS can be used as a useful tool for distinguishing the EH1 and S1 defects. We show that EH1 consists of a single emission line arising from the Ci(h), while S1 has two emission lines arising from the VSi(h) and VSi(k) lattice sites. |
| 書誌情報 |
Applied Physics Express
巻 15,
号 10,
p. 101002,
発行日 2022-09
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| 出版者 |
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出版者 |
IOP Publishing |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1882-0778 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.35848/1882-0786/ac8f83 |
