| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2024-05-23 |
| タイトル |
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タイトル |
Half-Metallic Heusler Alloy/MoS2 Based Magnetic Tunnel Junction |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Konstantin V. Larionov
Jose J. Pais Pereda
Li Songtian
Sakai Seiji
Pavel B. Sorokin
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
Integration of half-metallic materials and 2D spacers into vertical magnetoresistive spin valves may pave the way for effective low-power consumption storage and memory technologies. Driven by the recent successful growth of graphene/half-metallic Co2Fe(Ge1/2Ga1/2) (CFGG) heterostructure, here we report a theoretical investigation of magnetic tunnel junction (MTJ) based on the ferromagnetic CFGG Heusler alloy and the MoS2 spacer of different thicknesses. Using ab initio approach, we demonstrate that the inherent ferromagnetism of CFGG is preserved at the interface, while its half-metallicity is recovering within few atomic layers. Ballistic transport in CFGG/MoS2/CFGG MTJ is studied within the nonequilibrium Green’s function formalism, and a large magnetoresistance value up to ?105% is observed. These findings support the idea of effective spintronics devices based on half-metallic Heusler alloys and highly diversified transition metal dichalcogenide family. |
| 書誌情報 |
ACS Applied Materials & Interfaces
巻 14,
号 49,
p. 55167-55173,
発行日 2022-12
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| 出版者 |
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出版者 |
ACS Publications |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1944-8244 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1021/acsami.2c09655 |
