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Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity
https://repo.qst.go.jp/records/2000345
https://repo.qst.go.jp/records/2000345f9b66caf-a908-4f36-a933-9ab6e8d0f70f
| アイテムタイプ | 学術雑誌論文 / Journal Article(1) | |||||||||||||
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| 公開日 | 2023-11-30 | |||||||||||||
| タイトル | ||||||||||||||
| タイトル | Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity | |||||||||||||
| 言語 | en | |||||||||||||
| 言語 | ||||||||||||||
| 言語 | eng | |||||||||||||
| 資源タイプ | ||||||||||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||||
| 資源タイプ | journal article | |||||||||||||
| 著者 |
Kazutoshi Kojima
× Kazutoshi Kojima
× Sato Shinichiro
× Ohshima Takeshi
× Shin-Ichiro Kuroki
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| 抄録 | ||||||||||||||
| 内容記述タイプ | Abstract | |||||||||||||
| 内容記述 | 4H-SiC epitaxial layers with ultrahigh resistivity of over 1E+10 Ω cm were successfully grown by using a hot wall chemical vapor deposition system with vanadium doping. The resistivity of the vanadium doped epilayer was found to be strongly dependent on the types of dopant impurities. The resistivity of n-type-based vanadium doped semi-insulating 4H-SiC epilayers showed stronger dependence on vanadium incorporation than that of p-type-based epilayers. This means that the carrier trap characteristics of vanadium atoms may differ with respect to electrons and holes. As the result, an ultrahigh resistivity of over 1E+10 Ω cm was realized on an n-type-based 4H-SiC epilayer with vanadium doping. |
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| 書誌情報 |
Journal of Applied Physics 巻 131, 号 24, p. 245107, 発行日 2022-06 |
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| 出版者 | AIP Publishing | |||||||||||||
| ISSN | ||||||||||||||
| 収録物識別子タイプ | ISSN | |||||||||||||
| 収録物識別子 | 1089-7550 | |||||||||||||
| DOI | ||||||||||||||
| 識別子タイプ | DOI | |||||||||||||
| 関連識別子 | 10.1063/5.0095457 | |||||||||||||
