| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2023-11-30 |
| タイトル |
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タイトル |
Differences in radiation damage to carrier lifetimes in the neutral and depletion regions of InGaP and GaAs solar cells |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Tetsuya Nakamura
Mitsuru Imaizumi
Sato Shinichiro
Ohshima Takeshi
Hidefumi Akiyama
Yoshitaka Okada
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We investigated the radiation damage to carrier lifetimes in the neutral and depletion regions of the InGaP and GaAs subcells of an InGaP/GaAs/Ge triple-junction solar cell. It is difficult to clarify the degradation characteristics of the carrier lifetime in each region using the conventional analysis method (e.g., the dark current?voltage characteristic analysis), so we propose a novel method using the internal luminescence efficiency. The radiation damage coefficients for the carrier lifetimes in the neutral region of InGaP and GaAs subcells were two or three orders of magnitude larger than those in the depletion region. This result suggests that the effective radiation-induced defects in the regions, which significantly impact a solar cell’s electrical characteristics, differ. This paper discusses the effective radiation-induced defects that contribute to the output degradation in each region. We compare the radiation damage coefficients for the carrier lifetimes obtained in our analysis, the product of the capture cross section, and the defect introduction coefficient of each defect reported in previous studies. |
| 書誌情報 |
Journal of Applied Physics
巻 132,
号 11,
p. 115701,
発行日 2022-09
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| 出版者 |
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出版者 |
AIP Publishing |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
1089-7550 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1063/5.0099106 |
