| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2023-10-20 |
| タイトル |
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タイトル |
Integrated 4H-SiC Photosensors with Active Pixel Sensor-type Circuits for MGy-class Radiation Hardened CMOS UV Image Sensor |
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言語 |
en |
| 言語 |
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|
言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Masayuki Tsutsumi
Tatsuya Meguro
Takeyama Akinori
Takeshi Ohshima
Yasunori Tanaka
Shin-Ichiro Kuroki
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
For radiation-hardened CMOS image sensor (CIS), 4H-SiC photosensors with active pixel sensor (APS)-type circuits were developed and demonstrated. The dark current of 4H-SiC photodiodes was < 2 nA/cm2. The spectral sensitivity characteristics were also evaluated in the wavelength from 200 nm to 400 nm. The maximal quantum efficiency was 63% at 270 nm. The photosensors with APS type circuits showed high responses to UV light, demonstrating their operation. High gamma-ray dose experiments were also carried out. The dark current after 2 MGy (SiO2) irradiation was 25 nA/cm2. The photosensors with APS-type were successfully working after 2 MGy exposure. |
| 書誌情報 |
IEEE Electron Device Letters
巻 44,
号 1,
p. 100-103,
発行日 2022-12
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| 出版者 |
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出版者 |
IEEE |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0741-3106 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1109/LED.2022.3226494 |
