| アイテムタイプ |
学術雑誌論文 / Journal Article(1) |
| 公開日 |
2023-08-07 |
| タイトル |
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タイトル |
Morphological changes of nanostructures on silicon induced by C60-ion irradiation |
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言語 |
en |
| 言語 |
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言語 |
eng |
| 資源タイプ |
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資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
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資源タイプ |
journal article |
| 著者 |
Oishi Naoto
Murao Yoshiki
Nitta Noriko
Tsuchida Hidetsugu
Tomita Shigeo
Sasa Kimikazu
Hirata Kouichi
Shibata Hiromi
Hirano Yoshimi
Yamada Keisuke
Chiba Atsuya
Saito Yuuichi
Narumi Kazumasa
Hoshino Yasushi
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| 抄録 |
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内容記述タイプ |
Abstract |
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内容記述 |
We study morphological changes on the Si surface induced by the C60 ion beam under various irradiation conditions. The fluence and incident energy of the C60 ion beam was 1 × 10^16 ? 1×10^19 ions/m^2 and 50 keV ? 9 MeV, respectively. The beam's incident angle to the surface normal was 0° or 60°. As a result of the changes in these variables, three types of nanostructures were observed: concave and convex, string-like, and ripple structures. Structure shapes or sizes varied with changes in the parameters. Almost all cases showed concave and convex structures at an incident angle of 0°. At a 60° incident angle, string-like or ripple structures were formed. String-like structures were formed at higher incident energy, while ripple structures were formed at lower incident energy. These surface structural changes may be due to different formation mechanisms. We found that both string-like and ripple structures can form from sputtering and thermal. The formation of string structure requires a thicker amorphous layer and the proper balance of sputtering and annealing. |
| 書誌情報 |
Journal of Vacuum Science and Technology
巻 40,
号 6,
p. 036103,
発行日 2022-11
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| 出版者 |
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出版者 |
AIP Publishing |
| ISSN |
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収録物識別子タイプ |
ISSN |
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収録物識別子 |
0734-2101 |
| DOI |
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識別子タイプ |
DOI |
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関連識別子 |
10.1116/6.0002073 |
