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Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing
https://repo.qst.go.jp/records/84896
https://repo.qst.go.jp/records/8489670d5b918-2108-4fc9-9bf3-95ce0d7072b3
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2022-02-10 | |||||
タイトル | ||||||
タイトル | Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Yamane, Keisuke
× Yamane, Keisuke× Futamura, Ryo× Genjo, Shigeto× Hamamoto, Daiki× Maki, Yuito× Mihai Pavelescu, Emil× Takeshi, Ohshima× Sumita, Taishi× Imaizumi, Mitsuru× Wakahara, Akihiro× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III–V materials such as GaAs and InGaP generally degrade their crystal quality by irradiation damage. Atomic force microscopy and transmission electron microscopy reveal no degradation of structural defects. GaAsPN solar cell test devices are then fabricated. Results show that the conversion efficiency increases by proton/electron irradiation, which is mainly caused by an increase in the short-circuit current. | |||||
書誌情報 |
Japanese Journal of Applied Physics 巻 61, 号 2, p. 020907, 発行日 2022-02 |
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出版者 | ||||||
出版者 | IOP Publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-4922 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.35848/1347-4065/ac4a06 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://iopscience.iop.org/article/10.35848/1347-4065/ac4a06 |