@article{oai:repo.qst.go.jp:00084896,
 author = {Yamane, Keisuke and Futamura, Ryo and Genjo, Shigeto and Hamamoto, Daiki and Maki, Yuito and Mihai Pavelescu, Emil and Takeshi, Ohshima and Sumita, Taishi and Imaizumi, Mitsuru and Wakahara, Akihiro and Takeshi, Ohshima},
 issue = {2},
 journal = {Japanese Journal of Applied Physics},
 month = {Feb},
 note = {This study presents the positive effects of proton/electron irradiation on the crystallinity of GaP-based dilute nitride alloys. It is found that proton/electron irradiation followed by rapid thermal annealing enhances the PL peak intensity of GaPN alloys, whereas major photovoltaic III–V materials such as GaAs and InGaP generally degrade their crystal quality by irradiation damage. Atomic force microscopy and transmission electron microscopy reveal no degradation of structural defects. GaAsPN solar cell test devices are then fabricated. Results show that the conversion efficiency increases by proton/electron irradiation, which is mainly caused by an increase in the short-circuit current.},
 title = {Improved crystallinity of GaP-based dilute nitride alloys by proton/electron irradiation and rapid thermal annealing},
 volume = {61},
 year = {2022}
}