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{"_buckets": {"deposit": "56f9b614-0380-4bee-ae9c-41081743eea3"}, "_deposit": {"created_by": 1, "id": "84227", "owners": [1], "pid": {"revision_id": 0, "type": "depid", "value": "84227"}, "status": "published"}, "_oai": {"id": "oai:repo.qst.go.jp:00084227", "sets": ["1"]}, "author_link": ["1017445", "1017450", "1017446", "1017443", "1017448", "1017449", "1017447", "1017444"], "item_8_biblio_info_7": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2021-08", "bibliographicIssueDateType": "Issued"}, "bibliographicPageStart": "065703", "bibliographicVolumeNumber": "130", "bibliographic_titles": [{"bibliographic_title": "Journal of Applied Physics"}]}]}, "item_8_description_5": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are used to study irradiation-induced defects in high-purity semi-insulating (HPSI) 4H-SiC. Several deep levels with the ionization energy ranging from 0.1 to 1.1 eV have been observed in irradiated and annealed samples by PICTS. Among these, two deep levels, labeled E370 and E700 at 0.72 and 1.07 eV below the conduction band, respectively, are detected after high-temperature annealing. The appearance and disappearance of these two deep levels and the EPR signal of the positive C antisite–vacancy pair (CSiVC) in the sample annealed at 1000 and 1200 C, respectively, are well correlated. Based on data from PICTS and EPR and the energies predicted by previous calculations for different charge states of dominant intrinsic defects, the E370 and E700 levels are suggested to be related to the charge transition levels (0/–) and (+/0), respectively, of the C antisite-vacancy pair. The activation energy of Ea 1.1 eV in commercial HPSI 4H-SiC materials is, therefore, reassigned to be related to the single donor (+/0) level of CSiVC.", "subitem_description_type": "Abstract"}]}, "item_8_publisher_8": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "AIP publishing"}]}, "item_8_relation_14": {"attribute_name": "DOI", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1063/5.0059953", "subitem_relation_type_select": "DOI"}}]}, "item_8_relation_17": {"attribute_name": "関連サイト", "attribute_value_mlt": [{"subitem_relation_type_id": {"subitem_relation_type_id_text": "https://aip.scitation.org/doi/full/10.1063/5.0059953", "subitem_relation_type_select": "URI"}}]}, "item_8_source_id_9": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "0021-8979", "subitem_source_identifier_type": "ISSN"}]}, "item_access_right": {"attribute_name": "アクセス権", "attribute_value_mlt": [{"subitem_access_right": "metadata only access", "subitem_access_right_uri": "http://purl.org/coar/access_right/c_14cb"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Nakane, Hiroki"}], "nameIdentifiers": [{"nameIdentifier": "1017443", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Kato, Masashi"}], "nameIdentifiers": [{"nameIdentifier": "1017444", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ohkouchi, Yutaro"}], "nameIdentifiers": [{"nameIdentifier": "1017445", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Thang Trinh, Xuan"}], "nameIdentifiers": [{"nameIdentifier": "1017446", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "G. Ivanov, Ivan"}], "nameIdentifiers": [{"nameIdentifier": "1017447", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeshi, Ohshima"}], "nameIdentifiers": [{"nameIdentifier": "1017448", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Tien Son, Nguyen"}], "nameIdentifiers": [{"nameIdentifier": "1017449", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Takeshi, Ohshima", "creatorNameLang": "en"}], "nameIdentifiers": [{"nameIdentifier": "1017450", "nameIdentifierScheme": "WEKO"}]}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "Deep levels related to the carbon antisite–vacancy pair in 4H-SiC", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "Deep levels related to the carbon antisite–vacancy pair in 4H-SiC"}]}, "item_type_id": "8", "owner": "1", "path": ["1"], "permalink_uri": "https://repo.qst.go.jp/records/84227", "pubdate": {"attribute_name": "公開日", "attribute_value": "2021-09-28"}, "publish_date": "2021-09-28", "publish_status": "0", "recid": "84227", "relation": {}, "relation_version_is_last": true, "title": ["Deep levels related to the carbon antisite–vacancy pair in 4H-SiC"], "weko_shared_id": -1}
Deep levels related to the carbon antisite–vacancy pair in 4H-SiC
https://repo.qst.go.jp/records/84227
https://repo.qst.go.jp/records/842279ac06942-4ee4-418b-8ca6-b603d0c552de
Item type | 学術雑誌論文 / Journal Article(1) | |||||
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公開日 | 2021-09-28 | |||||
タイトル | ||||||
タイトル | Deep levels related to the carbon antisite–vacancy pair in 4H-SiC | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
資源タイプ | journal article | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Nakane, Hiroki
× Nakane, Hiroki× Kato, Masashi× Ohkouchi, Yutaro× Thang Trinh, Xuan× G. Ivanov, Ivan× Takeshi, Ohshima× Tien Son, Nguyen× Takeshi, Ohshima |
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抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are used to study irradiation-induced defects in high-purity semi-insulating (HPSI) 4H-SiC. Several deep levels with the ionization energy ranging from 0.1 to 1.1 eV have been observed in irradiated and annealed samples by PICTS. Among these, two deep levels, labeled E370 and E700 at 0.72 and 1.07 eV below the conduction band, respectively, are detected after high-temperature annealing. The appearance and disappearance of these two deep levels and the EPR signal of the positive C antisite–vacancy pair (CSiVC) in the sample annealed at 1000 and 1200 C, respectively, are well correlated. Based on data from PICTS and EPR and the energies predicted by previous calculations for different charge states of dominant intrinsic defects, the E370 and E700 levels are suggested to be related to the charge transition levels (0/–) and (+/0), respectively, of the C antisite-vacancy pair. The activation energy of Ea 1.1 eV in commercial HPSI 4H-SiC materials is, therefore, reassigned to be related to the single donor (+/0) level of CSiVC. | |||||
書誌情報 |
Journal of Applied Physics 巻 130, p. 065703, 発行日 2021-08 |
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出版者 | ||||||
出版者 | AIP publishing | |||||
ISSN | ||||||
収録物識別子タイプ | ISSN | |||||
収録物識別子 | 0021-8979 | |||||
DOI | ||||||
識別子タイプ | DOI | |||||
関連識別子 | 10.1063/5.0059953 | |||||
関連サイト | ||||||
識別子タイプ | URI | |||||
関連識別子 | https://aip.scitation.org/doi/full/10.1063/5.0059953 |