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Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
https://repo.qst.go.jp/records/77612
https://repo.qst.go.jp/records/77612d5ea155b-dd24-43de-8c39-0dca99b14297
Item type | 会議発表用資料 / Presentation(1) | |||||
---|---|---|---|---|---|---|
公開日 | 2019-11-15 | |||||
タイトル | ||||||
タイトル | Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles | |||||
言語 | ||||||
言語 | eng | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
資源タイプ | conference object | |||||
アクセス権 | ||||||
アクセス権 | metadata only access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
著者 |
Sato, Shinichiro
× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Hijikata, Yasuto× C. Gibson, Brant× D. Greentree, Andrew× Ohshima, Takeshi× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Ohshima, Takeshi |
|||||
抄録 | ||||||
内容記述タイプ | Abstract | |||||
内容記述 | We investigated near infrared photoluminescence (PL) spectra at room temperature of irradiated HPSI-4H-SiCs and found that PL ranging from 1100 nm to 1500 nm was strongly associated with the formation of nitrogen vacancy centers in 4H-SiC. | |||||
会議概要(会議名, 開催地, 会期, 主催者等) | ||||||
内容記述タイプ | Other | |||||
内容記述 | International Conference on Silicon Carbide and Related Materials 2019 | |||||
発表年月日 | ||||||
日付 | 2019-09-30 | |||||
日付タイプ | Issued |