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Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
https://repo.qst.go.jp/records/77612
https://repo.qst.go.jp/records/77612d5ea155b-dd24-43de-8c39-0dca99b14297
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-11-15 | |||||
| タイトル | ||||||
| タイトル | Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Sato, Shinichiro
× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Hijikata, Yasuto× C. Gibson, Brant× D. Greentree, Andrew× Ohshima, Takeshi× Sato, Shinichiro× Narahara, Takuma× Onoda, Shinobu× Yamazaki, Yuichi× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigated near infrared photoluminescence (PL) spectra at room temperature of irradiated HPSI-4H-SiCs and found that PL ranging from 1100 nm to 1500 nm was strongly associated with the formation of nitrogen vacancy centers in 4H-SiC. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | International Conference on Silicon Carbide and Related Materials 2019 | |||||
| 発表年月日 | ||||||
| 日付 | 2019-09-30 | |||||
| 日付タイプ | Issued | |||||
