@misc{oai:repo.qst.go.jp:00077612,
 author = {Sato, Shinichiro and Narahara, Takuma and Onoda, Shinobu and Yamazaki, Yuichi and Hijikata, Yasuto and C. Gibson, Brant and D. Greentree, Andrew and Ohshima, Takeshi and Sato, Shinichiro and Narahara, Takuma and Onoda, Shinobu and Yamazaki, Yuichi and Ohshima, Takeshi},
 month = {Sep},
 note = {We investigated near infrared photoluminescence (PL) spectra at room temperature of irradiated HPSI-4H-SiCs and found that PL ranging from 1100 nm to 1500 nm was strongly associated with the formation of nitrogen vacancy centers in 4H-SiC., International Conference on Silicon Carbide and Related Materials 2019},
 title = {Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles},
 year = {2019}
}