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アイテム
omparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence
https://repo.qst.go.jp/records/72662
https://repo.qst.go.jp/records/726626c2d1c3c-8328-4434-9f74-5887a1446af3
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-02-16 | |||||
| タイトル | ||||||
| タイトル | omparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
D., Haque M.
× D., Haque M.× Kamata, N.× Sato, Shinichiro× M., Hubbard S.× 佐藤 真一郎 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot (QD) structure generated by 3 MeV proton irradiation is performed by two wavelength excited photoluminescence (TWEPL). The above-gap excitation (AGE) source of 2.33 eV or 1.26 eV is used to excite GaAs host material or InAs QDs, respectively. The QD PL intensity decreased after irradiation of below-gap excitation (BGE) of 0.75 eV over AGE, indicating a pair of NRR centers activated. The proton irradiation at fluence of 7×1011cm-2 reduces the NRR density, while that of 4×1012cm-2 increases it. Defect formation, carrier injection and their fluence dependence explain experimental results. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 第44回光起電力専門家会議(PVSC44) | |||||
| 発表年月日 | ||||||
| 日付 | 2017-06-29 | |||||
| 日付タイプ | Issued | |||||
