{"created":"2023-05-15T14:53:21.460160+00:00","id":72662,"links":{},"metadata":{"_buckets":{"deposit":"9b844516-b255-482c-8d7a-8b29184ba468"},"_deposit":{"created_by":1,"id":"72662","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72662"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072662","sets":["10:28"]},"author_link":["715632","715633","715629","715631","715630"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-06-29","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot (QD) structure generated by 3 MeV proton irradiation is performed by two wavelength excited photoluminescence (TWEPL). The above-gap excitation (AGE) source of 2.33 eV or 1.26 eV is used to excite GaAs host material or InAs QDs, respectively. The QD PL intensity decreased after irradiation of below-gap excitation (BGE) of 0.75 eV over AGE, indicating a pair of NRR centers activated. The proton irradiation at fluence of 7×1011cm-2 reduces the NRR density, while that of 4×1012cm-2 increases it. Defect formation, carrier injection and their fluence dependence explain experimental results. ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第44回光起電力専門家会議(PVSC44)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"D., Haque M."}],"nameIdentifiers":[{"nameIdentifier":"715629","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kamata, N."}],"nameIdentifiers":[{"nameIdentifier":"715630","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro"}],"nameIdentifiers":[{"nameIdentifier":"715631","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"M., Hubbard S."}],"nameIdentifiers":[{"nameIdentifier":"715632","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"715633","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"omparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"omparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-02-16"},"publish_date":"2018-02-16","publish_status":"0","recid":"72662","relation_version_is_last":true,"title":["omparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:37:24.960339+00:00"}