{"created":"2023-05-15T15:03:10.096025+00:00","id":85568,"links":{},"metadata":{"_buckets":{"deposit":"d6c1f248-bfbb-4bfb-bb15-fe2158837ca3"},"_deposit":{"created_by":1,"id":"85568","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"85568"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00085568","sets":["10:29"]},"author_link":["1030360","1030358","1030356","1030359","1030363","1030361","1030364","1030362","1030357"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-09-10","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"炭化ケイ素(SiC)は，その優れた物性値から，低損失な次世代パワーデバイスや次世代の宇宙や原子力・加器施設用の耐環境・極限エレクトロニクスへの応用が期待されている．講演では，まずSiC半導体デバイスの耐放射線性研究のための一般的知見として，市販されているSiC-MOSFETとSi-MOSFET に対してのガンマ線照射を行い照射後の各種電気特性の変動からそれぞれの放射線性の違いについて示し考察を行なった．","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第82回　応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"1030356","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"1030357","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"小野田, 忍"}],"nameIdentifiers":[{"nameIdentifier":"1030358","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"1030359","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"1030360","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1030361","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1030362","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinobu, Onoda","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1030363","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1030364","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"SiC MOSFETへのガンマ線照射効果研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiC MOSFETへのガンマ線照射効果研究"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-09-29"},"publish_date":"2021-09-29","publish_status":"0","recid":"85568","relation_version_is_last":true,"title":["SiC MOSFETへのガンマ線照射効果研究"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:44:45.829929+00:00"}