{"created":"2023-05-15T15:03:04.467634+00:00","id":85447,"links":{},"metadata":{"_buckets":{"deposit":"2f448e54-ed4d-423f-9c04-74e82fd72455"},"_deposit":{"created_by":1,"id":"85447","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"85447"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00085447","sets":["10:27"]},"author_link":["1029558","1029560","1029563","1029567","1029559","1029564","1029566","1029565","1029562","1029561","1029569","1029568"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-03-16","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  半導体集積回路技術の研究開発フロンティアは微細化と 3 次元集積化であるが、シリコンエレクトロニクスは Si の材料物性により使用温度や耐放射線性は制限される。そこで高い熱伝導率とSiの約3倍のバンドギャップを有する材料として、炭化ケイ素（SiC）に着目し集積回路開発を行っている。この集積回路は、車載用デバイス、石油・天然ガス掘削、タービンエンジンなどの高温環境や、医療用デバイス、宇宙開発、原子力及び加速器施設などの放射線環境下で安定動作するエレクトロニクス（極限環境エレクトロニクス）として期待される。現在、2 MGy 以上の耐放射線性、最大500°Cまでの高温動作、100 MHz 以上の動作周波数を目標として開発を進めており、本公演では、SiCに最適化した各種半導体プロセス、およびCMOSイメージセンサなど試作回路の特性について報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"電子情報通信学会 総合大会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"1029558","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"志摩, 拓真"}],"nameIdentifiers":[{"nameIdentifier":"1029559","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"目黒, 達也"}],"nameIdentifiers":[{"nameIdentifier":"1029560","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Van Cuong, Vuong"}],"nameIdentifiers":[{"nameIdentifier":"1029561","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"1029562","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"1029563","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"1029564","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"児島, 一聡"}],"nameIdentifiers":[{"nameIdentifier":"1029565","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"1029566","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1029567","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1029568","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1029569","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"SiC半導体による極限環境エレクトロニクス構築","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiC半導体による極限環境エレクトロニクス構築"}]},"item_type_id":"10005","owner":"1","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-02-16"},"publish_date":"2022-02-16","publish_status":"0","recid":"85447","relation_version_is_last":true,"title":["SiC半導体による極限環境エレクトロニクス構築"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:49:05.996038+00:00"}