{"created":"2023-05-15T15:02:47.614335+00:00","id":85128,"links":{},"metadata":{"_buckets":{"deposit":"578efa0d-a263-4da8-b464-3638b328616d"},"_deposit":{"created_by":1,"id":"85128","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"85128"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00085128","sets":["10:29"]},"author_link":["1026266","1026267","1026261","1026259","1026262","1026264","1026265","1026256","1026263","1026257","1026258","1026268","1026260"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2022-02-22","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"炭化ケイ素(SiC)中のシリコン空孔(VSi)は磁気や温度を高感度に検出する「量子センサ」として注目されており、特に、VSiは高温下でも安定して存在するため、宇宙や地底といった厳環境に対応できる高感度磁気センサなどへの応用が期待できる。しかし、磁気センシングの基本原理となる光検出磁気共鳴(ODMR)現象の高温下での振る舞いは明らかになっていない。また、VSiは高エネルギー電子線照射によって形成するが、デコヒーレンスの要因となる不要な欠陥も同時に形成され、その影響も考慮しなければならない。そこで本研究では、ODMR スペクトルに対するVSi形成量及び測定温度依存性を系統的に調査した。さらに、磁気感度評価を行い、シリコン空孔量子センサの実現に向けた新たな知見を示した。\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第 11 回 半導体・超電導量子コテレンスと量子情報参加の為","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"元木, 秀"}],"nameIdentifiers":[{"nameIdentifier":"1026256","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato"}],"nameIdentifiers":[{"nameIdentifier":"1026257","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Masuyama"}],"nameIdentifiers":[{"nameIdentifier":"1026258","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki"}],"nameIdentifiers":[{"nameIdentifier":"1026259","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Seiichi, Saiki"}],"nameIdentifiers":[{"nameIdentifier":"1026260","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yasuto, Hijikata"}],"nameIdentifiers":[{"nameIdentifier":"1026261","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1026262","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shu, Motoki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1026263","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1026264","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Masuyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1026265","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1026266","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Seiichi, Saiki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1026267","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1026268","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Optically Detected Magnetic Resonance of Silicon Vacancies in 4H-SiC with Different Temperatures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optically Detected Magnetic Resonance of Silicon Vacancies in 4H-SiC with Different Temperatures"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2022-03-09"},"publish_date":"2022-03-09","publish_status":"0","recid":"85128","relation_version_is_last":true,"title":["Optically Detected Magnetic Resonance of Silicon Vacancies in 4H-SiC with Different Temperatures"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T17:59:20.512215+00:00"}