@article{oai:repo.qst.go.jp:00085046,
 author = {Hayafuchi, Yasuaki and Konno, Ryota and Noorhidayati, Annisa and Hamzah Fauzi, Mohammad and Shibata, Naokazu and Hashimoto, Katsushi and Yoshiro, Hirayama and Yoshiro, Hirayama},
 issue = {2},
 journal = {Applied Physics Express},
 month = {Feb},
 note = {The even-denominator states have attracted considerable attention owing to their possible applications in future quantum technologies. In this letter, we first report a 3/2 diagonal resistance, indicating the existence of a 3/2 state in a nanometer-sized triple-gated quantum point contact (QPC) fabricated on a high-mobility (not ultra-high-mobility) single-layer two-dimensional (2D) GaAs wafer. The center gate plays a crucial role in realizing the QPC’s 3/2 state. Our observation of the 3/2 state using a conventional QPC device, which is a suitable building block for semiconductor quantum devices, paves a new path for the development of semiconductor-based quantum technologies.},
 title = {Even-denominator fractional quantum Hall state in conventional triple-gated quantum point contact},
 volume = {15},
 year = {2022}
}