{"created":"2023-05-15T15:02:34.270416+00:00","id":84840,"links":{},"metadata":{"_buckets":{"deposit":"0ca61070-a16b-480a-9815-73791b3a51b0"},"_deposit":{"created_by":1,"id":"84840","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"84840"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00084840","sets":["1"]},"author_link":["1023526","1023524","1023521","1023527","1023523","1023525","1023530","1023531","1023529","1023528","1023532","1023522"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2021-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageStart":"2","bibliographicVolumeNumber":"6","bibliographic_titles":[{"bibliographic_title":"Quantum Beam Science"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"電子線照射を用いればダイヤモンド中のNV（窒素・空孔）センターを高濃度に形成することが出来ることが知られている。2 MeV電子線照射を室温で実施し、照射を進める過程で熱処理を行い、その都度P1センター（格子中窒素不純物）の消費の様子や形成されたNVセンターの電荷状態、総量と照射量の関係を調べた。その結果、高効率でのNVセンター形成が確認出来た一方でP1センターがNVセンター以外の欠陥に消費されている可能性が示唆された。","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"MDPI"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.3390/qubs6010002","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.mdpi.com/2412-382X/6/1/2","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2412-382X","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shuya, Ishii"}],"nameIdentifiers":[{"nameIdentifier":"1023521","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Seiichi, Saiki"}],"nameIdentifiers":[{"nameIdentifier":"1023522","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinobu, Onoda"}],"nameIdentifiers":[{"nameIdentifier":"1023523","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Masuyama"}],"nameIdentifiers":[{"nameIdentifier":"1023524","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hiroshi, Abe"}],"nameIdentifiers":[{"nameIdentifier":"1023525","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1023526","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shuya, Ishii","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1023527","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Seiichi, Saiki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1023528","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinobu, Onoda","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1023529","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Masuyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1023530","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hiroshi, Abe","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1023531","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1023532","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Ensemble Negatively-Charged Nitrogen-Vacancy Centers in type-Ib Diamond Created by High Fluence Electron Beam Irradiation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ensemble Negatively-Charged Nitrogen-Vacancy Centers in type-Ib Diamond Created by High Fluence Electron Beam Irradiation"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-11-18"},"publish_date":"2021-11-18","publish_status":"0","recid":"84840","relation_version_is_last":true,"title":["Ensemble Negatively-Charged Nitrogen-Vacancy Centers in type-Ib Diamond Created by High Fluence Electron Beam Irradiation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T18:09:49.895244+00:00"}