{"created":"2023-05-15T15:01:41.443478+00:00","id":83680,"links":{},"metadata":{"_buckets":{"deposit":"4e46b844-de94-4aea-87de-f16ce5d131dd"},"_deposit":{"created_by":1,"id":"83680","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"83680"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00083680","sets":["10:29"]},"author_link":["1008907","1008909","1008913","1008914","1008908","1008912","1008911","1008910"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-10-28","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  For the decommissioning of the Fukushima Daiichi Nuclear Power Plant, development of a radiation hardened image sensor is key factor to enhance the decommissioning activities. As an ultra-high radiation hardened image sensor, full-4H-SiC pixel devices with a 4H-SiC UV photo diode and four n-channel MOSFETs were developed and the output characteristics were investigated.\n  UV photo current characteristics of the photo diode was increased with shortening the wavelength of illumnating light from 370 nm to 290 nm. The maximal quantum efficiency was 30.7% at the wavelength of 290 nm.   Additionally, The 4H-SiC pixel device at the dark and illumination states under the exposure of 300 nm UV light were characterized. At the illumination states, the output voltage became higher by increasing illumination intensity. As the results, photo response of developed full-4H-SiC pixel devices were demonstrated.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"13th Europian Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Shin-Ichiro, Kuroki"}],"nameIdentifiers":[{"nameIdentifier":"1008907","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nishigaito, Kenta"}],"nameIdentifiers":[{"nameIdentifier":"1008908","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Meguro, Tatsuya"}],"nameIdentifiers":[{"nameIdentifier":"1008909","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama"}],"nameIdentifiers":[{"nameIdentifier":"1008910","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima"}],"nameIdentifiers":[{"nameIdentifier":"1008911","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tanaka, Yasunori"}],"nameIdentifiers":[{"nameIdentifier":"1008912","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1008913","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1008914","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-10-15"},"publish_date":"2021-10-15","publish_status":"0","recid":"83680","relation_version_is_last":true,"title":["Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:10:27.696958+00:00"}