@misc{oai:repo.qst.go.jp:00083680,
 author = {Shin-Ichiro, Kuroki and Nishigaito, Kenta and Meguro, Tatsuya and Akinori, Takeyama and Takeshi, Ohshima and Tanaka, Yasunori and Akinori, Takeyama and Takeshi, Ohshima},
 month = {Oct},
 note = {For the decommissioning of the Fukushima Daiichi Nuclear Power Plant, development of a radiation hardened image sensor is key factor to enhance the decommissioning activities. As an ultra-high radiation hardened image sensor, full-4H-SiC pixel devices with a 4H-SiC UV photo diode and four n-channel MOSFETs were developed and the output characteristics were investigated.
  UV photo current characteristics of the photo diode was increased with shortening the wavelength of illumnating light from 370 nm to 290 nm. The maximal quantum efficiency was 30.7% at the wavelength of 290 nm.   Additionally, The 4H-SiC pixel device at the dark and illumination states under the exposure of 300 nm UV light were characterized. At the illumination states, the output voltage became higher by increasing illumination intensity. As the results, photo response of developed full-4H-SiC pixel devices were demonstrated., 13th Europian Conference on Silicon Carbide and Related Materials (ECSCRM 2020-2021)},
 title = {Output Characteristics of 4H-SiC Pixel Devices for Radiation Hardened UV CMOS Image Sensors},
 year = {2021}
}