{"created":"2023-05-15T15:01:28.104263+00:00","id":83386,"links":{},"metadata":{"_buckets":{"deposit":"e54ea8e5-3fb0-4b51-a3d1-dab6d62fa54f"},"_deposit":{"created_by":1,"id":"83386","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"83386"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00083386","sets":["10:28"]},"author_link":["1003080","1003082","1003085","1003084","1003083","1003081","1003079","1003086"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-09-23","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  炭化ケイ素接合型電解効果トランジスタ（SiC JFET）はガンマ線照射による特性劣化が小さい素子として期待されているが、MGyオーダのガンマ線を照射すると、しきい値電圧（Vth）が1V弱正電圧側にシフトする。この原因を探るため、室温付近で欠陥によるキャリア電子の捕獲・放出挙動を調べることが可能である、バンドギャップエネルギーよりも小さい光（サブバンドギャップ光）を照射し電気特性の変化を調べた。\n　サンプルに室温で17MGyガンマ線照射した産総研製ノーマリーオン横型nチャネルJFETを用いた。4H-SiCのバンドギャップ（3.26eV）より小さいエネルギーの光である波長469 nm（2.64eV）または853nm (1.46 eV)のLEDを照射しつつ、ドレイン電流－ゲート電圧またはドレイン電圧（ID-VG、ID-VD）特性を測定した。\n　その結果、光照射するとしきい値電圧が未照射サンプルに近い値まで回復した。このことはしきい値電圧のシフトが、ゲート周辺部に生成した欠陥に、キャリア電子が捕獲されて生ずることを示唆する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第82回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"1003079","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"1003080","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"1003081","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎 "}],"nameIdentifiers":[{"nameIdentifier":"1003082","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣 "}],"nameIdentifiers":[{"nameIdentifier":"1003083","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1003084","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1003085","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1003086","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"サブバンドギャップ光を用いたガンマ線照射4H-SiC JFETの キャラクタリゼーション","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"サブバンドギャップ光を用いたガンマ線照射4H-SiC JFETの キャラクタリゼーション"},{"subitem_title":"Characterization of gamma-irradiated 4H-SiC JFETs by illumination of sub-bandgap light","subitem_title_language":"en"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-06-24"},"publish_date":"2021-06-24","publish_status":"0","recid":"83386","relation_version_is_last":true,"title":["サブバンドギャップ光を用いたガンマ線照射4H-SiC JFETの キャラクタリゼーション"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:31:33.114078+00:00"}