{"created":"2023-05-15T15:01:25.195390+00:00","id":83321,"links":{},"metadata":{"_buckets":{"deposit":"d471e017-86d0-42aa-a848-2bc9fd2d64be"},"_deposit":{"created_by":1,"id":"83321","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"83321"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00083321","sets":["10:29"]},"author_link":["1000680","1000679","1000684","1000683","1000682","1000678","1000685","1000681"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-09-11","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"   高放射線下など極限環境で動作可能なイメージセンサとして、耐放射線性に優れた4H-SiCを用いてCMOSイメージセンサ用画素デバイスを試作し、波長290 nmから370 nmの紫外線照射下での動作特性を調べた。\n　まず作成した4H-SiCフォトダイオードの量子効率を測定したところ、波長290 nmにおいて30.7%であった。4H-SiC画素デバイスに波長300 nmの紫外光を照射し、照射強度を0 – 0.555 mW/cm2まで変化させ出力電圧を測定した結果、紫外光の照射強度を上げると信号変化が大きくなった。これは紫外光照射でフォトダイオードに生成したキャリア電子が、CMOS部のトランジスタに充電されていることを示し、作成したイメージセンサが正常に動作することを示している。\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第82回応用物理学会秋季学術講演会 ","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"1000678","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"西垣内, 健汰"}],"nameIdentifiers":[{"nameIdentifier":"1000679","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"目黒, 達也"}],"nameIdentifiers":[{"nameIdentifier":"1000680","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"1000681","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"1000682","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"1000683","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000684","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000685","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"フル4H-SiC画素デバイスの紫外線照射下動作特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"フル4H-SiC画素デバイスの紫外線照射下動作特性"},{"subitem_title":"Operating Characteristics of Full 4H-SiC Pixel Device under UV-Light Irradiation","subitem_title_language":"en"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-06-24"},"publish_date":"2021-06-24","publish_status":"0","recid":"83321","relation_version_is_last":true,"title":["フル4H-SiC画素デバイスの紫外線照射下動作特性"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:40:31.342074+00:00"}