{"created":"2023-05-15T15:01:24.200460+00:00","id":83299,"links":{},"metadata":{"_buckets":{"deposit":"8aca43b8-d026-483c-8c72-ea1850fb2c82"},"_deposit":{"created_by":1,"id":"83299","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"83299"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00083299","sets":["10:29"]},"author_link":["1000454","1000453","1000448","1000451","1000452","1000449","1000450"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-09-10","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"4Hあるいは6H-SiCにおける半絶縁性はバナジウム（V）ドーピングあるいは点欠陥の導入によりこれらがキャリアトラップとして作用・発現することが知られており、半絶縁性SiCバルク単結晶として入手が可能である。本研究では4H-SiC CMOS構造あるは層間絶縁膜へのVドープ半絶縁性エピタキシャル層の適応を念頭に置いて、Vドープ4H-SiC半絶縁性エピタキシャル層の開発を行っている。この時半絶縁性の温度依存性は重要なパラメーターとなるが、バルク単結晶では様々なデータが報告されており系統だった結果にはなっていない。そこで本発表ではVがトラップするドナーあるいはアクセプターに注目、ｎ型ベースにＶをドーピングした場合とｐ型ベースにＶをドーピングした場合の半絶縁性の違いを調べたのでその結果について報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第82回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"児島, 一聡"}],"nameIdentifiers":[{"nameIdentifier":"1000448","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"1000449","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"1000450","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"1000451","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山口, 浩"}],"nameIdentifiers":[{"nameIdentifier":"1000452","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000453","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000454","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Vドープ4H-SiC単結晶薄膜の半絶縁性に対する不純物の影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Vドープ4H-SiC単結晶薄膜の半絶縁性に対する不純物の影響"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-09-09"},"publish_date":"2021-09-09","publish_status":"0","recid":"83299","relation_version_is_last":true,"title":["Vドープ4H-SiC単結晶薄膜の半絶縁性に対する不純物の影響"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:41:21.633442+00:00"}