{"created":"2023-05-15T15:01:24.155584+00:00","id":83298,"links":{},"metadata":{"_buckets":{"deposit":"f15be144-1b21-4eeb-9134-6a07ba11c60a"},"_deposit":{"created_by":1,"id":"83298","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"83298"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00083298","sets":["10:29"]},"author_link":["1000445","1000441","1000442","1000444","1000443","1000446","1000437","1000439","1000438","1000447","1000440"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-09-12","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"炭化ケイ素(SiC)中のシリコン空孔(VSi−)は磁気や温度を高感度に検出する「量子センサ」として注目されており、特に、VSi−は高温下でも安定して存在するため、宇宙や地底といった厳環境に対応できる高感度磁気センサなどへの応用が期待できる。しかし、磁気センシングの基本原理となる光検出磁気共鳴(ODMR)現象の高温下での振る舞いは明らかになっていない。また、VSi−は高\nエネルギー電子線照射によって形成するが、デコヒーレンスの要因となる不要な欠陥も同時に形成され、その影響も考慮しなければならない。そこで本研究では、ODMR スペクトルに対するVSi−形成量及び測定温度依存性を系統的に調査した。高純度半絶縁性4H-SiC 基板に2 MeV 電子線を照射してVSi−を形成した。その後、真空中600 ℃で30 分間の熱処理を行い、VSi−以外の不要な欠陥を低減した。その脚気、70 MHz に基底準位のゼロ磁場分裂に起因する共鳴ピークが確認できた。しかし、高温ではコントラスト(ピーク高)が低下すると共に半値幅が増加したため、磁気感度は低下することが予想される。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第82回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"元木, 秀"}],"nameIdentifiers":[{"nameIdentifier":"1000437","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"1000438","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"増山, 雄太"}],"nameIdentifiers":[{"nameIdentifier":"1000439","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"1000440","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"1000441","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"1000442","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shu, Motoki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000443","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000444","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuta, Masuyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000445","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000446","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1000447","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H-SiC中シリコン空孔における光検出磁気共鳴スペクトルの温度依存性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC中シリコン空孔における光検出磁気共鳴スペクトルの温度依存性"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-09-09"},"publish_date":"2021-09-09","publish_status":"0","recid":"83298","relation_version_is_last":true,"title":["4H-SiC中シリコン空孔における光検出磁気共鳴スペクトルの温度依存性"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:41:28.638583+00:00"}