{"created":"2023-05-15T15:01:14.236668+00:00","id":83076,"links":{},"metadata":{"_buckets":{"deposit":"28b7f03f-1d5e-43b6-9d34-7ac249d5c8f0"},"_deposit":{"created_by":1,"id":"83076","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"83076"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00083076","sets":["10:29"]},"author_link":["995373","995370","995378","995377","995375","995379","995376","995374","995371","995372"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-07-09","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"固体表面からのポジトロニウム放出の研究では、主に金属や絶縁体が調べられて来たが、半導体に関する研究例は極めて少ない。半導体には、励起型（間接・直接励起）、バンドギャップ（100meV～10eV）、伝導型（n型、p型、半絶縁性）、そして、強いスピン軌道相互作用の有無によって様々な違いがある。半導体には、金属や絶縁体と同じように、負のポジトロニウム仕事関数を持つものが多くある。これらのことから、半導体からのポジトロニウム放出過程を調べることは、意味のあることと言える。そこで、我々は、2017年頃から、半導体からのポジトロニウム放出過程の研究を開始した。これまで、間接半導体であるシリコン（Si）と炭化ケイ素（SiC）からのポジトロニウム放出についての研究結果を報告してきた。今回は、直接励起型でワイドギャップを持つ窒化ガリウム（GaN）について得られた結果を報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第58回アイソトープ・放射線研究発表会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"河裾, 厚男"}],"nameIdentifiers":[{"nameIdentifier":"995370","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"河裾"}],"nameIdentifiers":[{"nameIdentifier":"995371","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"前川, 雅樹"}],"nameIdentifiers":[{"nameIdentifier":"995372","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮下, 敦巳"}],"nameIdentifiers":[{"nameIdentifier":"995373","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"和田, 健"}],"nameIdentifiers":[{"nameIdentifier":"995374","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"長嶋, 泰之"}],"nameIdentifiers":[{"nameIdentifier":"995375","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"石田, 明"}],"nameIdentifiers":[{"nameIdentifier":"995376","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Atsuo, Kawasuso","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"995377","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Masaki, Maekawa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"995378","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Atsumi, Miyashita","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"995379","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"GaN(0001)表面における ポジトロニウム生成","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"GaN(0001)表面における ポジトロニウム生成"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-07-02"},"publish_date":"2021-07-02","publish_status":"0","recid":"83076","relation_version_is_last":true,"title":["GaN(0001)表面における ポジトロニウム生成"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:01:56.538833+00:00"}