@article{oai:repo.qst.go.jp:00082819,
 author = {Kazumasa, Okamoto and Shunpei, Kawai and Yuta, Ikari and Shigeo, Hori and Akihiro, Konda and Koki, Ueno and Yohei, Arai and Masahiko, Ishino and Dinh, Thanhhung and Masaharu, Nishikino and Akira, Kon and Shigeki, Owada and Yuichi, Inubushi and Hiroo, Kinoshita and Takahiro, Kozawa and Masahiko, Ishino and Dinh, Thanhhung and Masaharu, Nishikino and Akira, Kon},
 journal = {Applied Physics Express},
 month = {May},
 note = {Efforts are being focused on increasing the power of EUV light sources used in semiconductor manufacturing to increase the throughput. As a result, the investigation of the effect of high power sources on resist materials is a critical issue. A chemically amplified resist (CAR) and a non-CAR were irradiated with 13.5-nm EUV high-flux pulses from a soft X-ray free-electron laser (FEL). In the non-CAR, the positive-tone resist (ZEP520A) exhibited lower sensitivity at high irradiation densities, while the negative-tone resist [poly(4-hydroxystyrene)] exhibited a higher sensitivity. In addition, the dose rate did not considerably affect the sensitivity of the CAR.},
 title = {Dependence of dose rate on the sensitivity of the resist under ultra-high flux extreme ultraviolet (EUV) pulse irradiation},
 volume = {14},
 year = {2021}
}