{"created":"2023-05-15T15:00:45.960004+00:00","id":82436,"links":{},"metadata":{"_buckets":{"deposit":"8da1fa22-ef40-454a-89ed-ee4a6f291303"},"_deposit":{"created_by":1,"id":"82436","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"82436"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00082436","sets":["10:28"]},"author_link":["939513","939523","939514","939512","939521","939515","939519","939520","939518","939516","939522","939517","939524"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-03-19","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"シリコン（Si）中エルビウム（Er）は光通信の最低伝送損失波長である1.5µm帯の光子を放出し、既存のCMOSデバイスと優れた互換性を持つことから、量子暗号通信に必要不可欠な単一光子源として注目されている。しかし、Erの蛍光強度が低いことが課題となる。私たちはSi中Erの発光特性に関する基礎研究を行ってきており、SOI基板上にナノピラー構造を形成することで、ナノピラー中のErからのフォトルミネッセンス（PL）強度が増大することを見出した。本研究では、ナノピラー構造を組み込んだSiダイオードを作製し、その電気伝導特性およびエレクトロルミネッセンス（EL）を室温で観測した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第68回応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"古瀬, 遼"}],"nameIdentifiers":[{"nameIdentifier":"939512","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"藤本, 宇郁"}],"nameIdentifiers":[{"nameIdentifier":"939513","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"魏, 啓楠"}],"nameIdentifiers":[{"nameIdentifier":"939514","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"鈴木, 雄大"}],"nameIdentifiers":[{"nameIdentifier":"939515","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"アブデルガファ, 愛満"}],"nameIdentifiers":[{"nameIdentifier":"939516","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"矢野, 真麻"}],"nameIdentifiers":[{"nameIdentifier":"939517","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"千葉, 悠貴"}],"nameIdentifiers":[{"nameIdentifier":"939518","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Prati, Enrico"}],"nameIdentifiers":[{"nameIdentifier":"939519","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Celebrano, Michele"}],"nameIdentifiers":[{"nameIdentifier":"939520","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"939521","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"品田, 高宏"}],"nameIdentifiers":[{"nameIdentifier":"939522","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"谷井, 孝至"}],"nameIdentifiers":[{"nameIdentifier":"939523","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939524","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"ナノピラー構造を組み込んだEr:O共添加Siダイオードの電気伝導特性およびエレクトロルミネッセンス計測","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ナノピラー構造を組み込んだEr:O共添加Siダイオードの電気伝導特性およびエレクトロルミネッセンス計測"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-03-23"},"publish_date":"2021-03-23","publish_status":"0","recid":"82436","relation_version_is_last":true,"title":["ナノピラー構造を組み込んだEr:O共添加Siダイオードの電気伝導特性およびエレクトロルミネッセンス計測"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:25:21.320671+00:00"}