{"created":"2023-05-15T15:00:45.916118+00:00","id":82435,"links":{},"metadata":{"_buckets":{"deposit":"170232b5-2d61-4dd7-aa7c-27c3167680f4"},"_deposit":{"created_by":1,"id":"82435","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"82435"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00082435","sets":["10:28"]},"author_link":["939491","939495","939492","939494","939493","939490","939496","939498","939497"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2021-03-17","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"現在、炭化ケイ素(SiC)は結晶多形(ポリタイプ)を持ち、ポリタイプの違いによって物性が異なることが見出されている。この内、4H-SiCはデバイス応用に向けて物理的性質が最も優れている。一方、4H-SiC中における電子を1個捕獲した窒素空孔センタ(NVセンタ)は量子分野への応用が期待されている。従来の暗号通信よりもはるかに秘匿性が高い「量子暗号通信」においては、安定した単一光子の生成のために“単一の”NVセンタが必要である。しかし、4H-SiC結晶中の単一NVセンタを観測した例は世界でも数例しかなく効率的な形成メカニズムは明らかになっていない。本研究では、単一NVセンタを生成するために、プロトン照射を行った試料でPLマッピングを行った。また、生成されたNVセンタが単一光子性を有しているか判定するため、光子相関測定を行った。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第68回応用物理学会春季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"若林, 健"}],"nameIdentifiers":[{"nameIdentifier":"939490","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"冨高, 祐哉"}],"nameIdentifiers":[{"nameIdentifier":"939491","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"楢原, 拓真"}],"nameIdentifiers":[{"nameIdentifier":"939492","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"939493","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"児島, 一聡"}],"nameIdentifiers":[{"nameIdentifier":"939494","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"939495","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takuma, Narahara","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939496","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shinichiro, Sato","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939497","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"939498","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"SiC結晶中窒素空孔センタの量子状態測定","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiC結晶中窒素空孔センタの量子状態測定"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2021-03-23"},"publish_date":"2021-03-23","publish_status":"0","recid":"82435","relation_version_is_last":true,"title":["SiC結晶中窒素空孔センタの量子状態測定"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:25:24.181410+00:00"}