@misc{oai:repo.qst.go.jp:00082150,
 author = {Teraji, Tokuyuki and Shinei, Chikara and Miyakawa, Masashi and Watanabe, Kenji and Koizumi, Satoshi and Shuya, Ishii and Seiichi, Saiki and Shinobu, Onoda and Takeshi, Ohshima and Shuya, Ishii and Seiichi, Saiki and Shinobu, Onoda and Takeshi, Ohshima},
 month = {Dec},
 note = {Diamond growth is a key technology for the developing quantum sensing device using NV centers. Desired concentration of NV centers varies from 1ppb to 10ppm depending on the type of quantum sensing devices. Then, precise control of nitrogen concentration in wide doping range is requested for diamond growth. Carbon isotope control is another important issue of diamond growth to prolong the spin coherent time. Here, research activity of diamond growth in National Institute for Materials Science (NIMS) by chemical vapor deposition (CVD) and high-pressure and high-temperature (HPHT) will be introduced focusing on the NV center formation., 3rd IFQMS},
 title = {Nitrogen concentration control in diamond growth for NV center formation},
 year = {2020}
}