@misc{oai:repo.qst.go.jp:00081349,
 author = {Sato, Shinichiro and Li, Shuo and Deki, Manato and Nishimura, Tomoaki and Watanabe, Hirotaka and Nitta, Shugo and Honda, Yoshio and C. Gibson, Brant and D. Greentree, Andrew and Amano, Hiroshi and Ohshima, Takeshi and Shinichiro, Sato and Takeshi, Ohshima},
 month = {Nov},
 note = {We fabricated circular- and square-shaped pillar arrays with sizes ranging from 100 nm to 2 µm on Pr-implanted GaN epilayers using electron beam lithography, metal deposition, and dry etching techniques. The implantation energy and dose were 100 keV and 1.3×1014 cm-2, respectively. The peak implanted region was estimated to be 24 nm from the top of pillars according to the Monte Carlo simulation code TRIM, and the pillar length was measured to be 510 nm by scanning electron microscopy. Intensity of two emission peaks at 650 nm and 652 nm, which were attributed to 3P0-3F2 transition in the 4f-shell, was analyzed by a home build confocal microscopy. It was shown that the photon emission intensity from Pr3+ ions strongly depended on the nanopillar structures and sizes, and the enhancement more than 20-fold was achieved compared to the non-structured region. The luminescence lifetime was independent of nanopillar structures and sizes. These results indicate that the absorption efficiency of incident photons and the photon extraction efficiency were enhanced by the confinement in nanopillars., 4th QST International Symposium},
 title = {Enhanced photon extraction from praseodymium ions implanted with gallium nitride nanopillars},
 year = {2020}
}