{"created":"2023-05-15T14:59:54.914529+00:00","id":81301,"links":{},"metadata":{"_buckets":{"deposit":"1f448138-2a12-4659-9d7d-5a108ee2b144"},"_deposit":{"created_by":1,"id":"81301","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"81301"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00081301","sets":["10:28"]},"author_link":["908113","908117","908118","908110","908114","908119","908108","908112","908107","908109","908111","908116","908106","908115"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2020-12-09","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　宇宙放射線耐性のパワーデバイスとして近年、炭化ケイ素 金属-酸化膜-半導体電界効果トランジスタ（SiC-MOSFET）の研究が進められているが、ゲート酸化膜の放射線耐性が弱いという課題があり、またその劣化挙動はシリコン（Si）MOSFETと異なることが報告されている。そこで本研究では、ゲート電極-ゲート酸化膜-SiCで構成されるSiC-MOSキャパシタにそれぞれ正負の電圧を印加しつつ重イオンビームを照射し、酸化膜中を流れるリーク電流を測定した。その結果、負電印加照射では-110V程度までリーク電流の増加が抑制され、SiC-MOSFETの場合、負電圧印加で放射線耐性が向上することを明らかにした。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会 第7回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"高橋, 美沙"}],"nameIdentifiers":[{"nameIdentifier":"908106","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"仲田, 祐希"}],"nameIdentifiers":[{"nameIdentifier":"908107","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"水田, 栄一"}],"nameIdentifiers":[{"nameIdentifier":"908108","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"新藤, 浩之"}],"nameIdentifiers":[{"nameIdentifier":"908109","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"先崎, 純寿"}],"nameIdentifiers":[{"nameIdentifier":"908110","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"908111","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"908112","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"908113","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩田, 佳之"}],"nameIdentifiers":[{"nameIdentifier":"908114","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"久保山, 智司"}],"nameIdentifiers":[{"nameIdentifier":"908115","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"908116","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"908117","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"908118","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Iwata, Yoshiyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"908119","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"SiC MOSキャパシタへの重イオン照射によるリーク電流の挙動","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"SiC MOSキャパシタへの重イオン照射によるリーク電流の挙動"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-12-10"},"publish_date":"2020-12-10","publish_status":"0","recid":"81301","relation_version_is_last":true,"title":["SiC MOSキャパシタへの重イオン照射によるリーク電流の挙動"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:07:14.824957+00:00"}