{"created":"2023-05-15T14:59:54.780809+00:00","id":81299,"links":{},"metadata":{"_buckets":{"deposit":"1d928e22-54f7-4658-8836-3dac72193ba3"},"_deposit":{"created_by":1,"id":"81299","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"81299"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00081299","sets":["10:28"]},"author_link":["908123","908126","908120","908122","908121","908125","908124"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2020-12-09","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　高線量に曝される原子力発電所廃炉用ロボットの構成部品の中でも、特にカメラは放射線の遮蔽が難しく、カメラ自体が放射線耐性を備えることは、長時間作業可能な廃炉用ロボットを実現する上で重要な課題である。本研究では放射線耐性に優れたシリコンカーバイドMOSFET(SiC-MOSFET)と従来のシリコンフォトダイオード(Si-PD)を同一基板上に集積化した、放射線耐性を備えるイメージセンサを提案している。新しい異種基板貼り合わせ方法等を提案し、多画素デバイスの集積化について検討したので報告する。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会 第7回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"目黒, 達也"}],"nameIdentifiers":[{"nameIdentifier":"908120","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"908121","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"908122","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"908123","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"908124","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"908125","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"908126","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素プロセス","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素プロセス"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-12-10"},"publish_date":"2020-12-10","publish_status":"0","recid":"81299","relation_version_is_last":true,"title":["耐放射線イメージセンサに向けたSOI-Si/4H-SiC画素プロセス"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:07:12.361877+00:00"}