{"created":"2023-05-15T14:59:53.076358+00:00","id":81262,"links":{},"metadata":{"_buckets":{"deposit":"71b11af7-0a11-4fc0-ac1f-b719dd2ce74c"},"_deposit":{"created_by":1,"id":"81262","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"81262"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00081262","sets":["10:28"]},"author_link":["921143","921138","921136","921140","921145","921144","921139","921135","921142","921141","921137"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2020-12-09","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　炭化ケイ素接合型電解効果トランジスタ (SiC JFET) は、金属-酸化膜-半導体 電解効果トランジスタ(MOSFET)のようなゲート酸化膜を持たず、ガンマ線照射の影響を受けにくい耐放射線性デバイスとして期待されている。そこでSiC JFETのデバイス構造が、ガンマ線耐性に及ぼす影響を調べた。9MGy(H2O)までガンマ線を照射した結果、デバイス構造にかかわらずリーク電流が増加し、JFET/表面パッシベーション酸化膜界面への照射による欠陥生成が推測された。またゲート長が長いサンプルほど、相互コンダクタンスの低下量が大きくなった。これは照射でチャネル領域に生成した欠陥が直列抵抗として働き、ゲート長が長い（サイズが大きい）サンプルほどその影響を受けやすいことを示している。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会 第7回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"921135","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"921136","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"921137","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"921138","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"921139","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"921140","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"921141","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Akinori, Takeyama","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"921142","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahiro, Makino","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"921143","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yuichi, Yamazaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"921144","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeshi, Ohshima","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"921145","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-11-27"},"publish_date":"2020-11-27","publish_status":"0","recid":"81262","relation_version_is_last":true,"title":["デバイス構造が4H-SiC JFETのMGyガンマ線耐性に及ぼす影響"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T20:51:19.377808+00:00"}