{"created":"2023-05-15T14:59:33.702757+00:00","id":80816,"links":{},"metadata":{"_buckets":{"deposit":"97061ac4-52d4-4e34-b0d9-3fecd62b0d52"},"_deposit":{"created_by":1,"id":"80816","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80816"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080816","sets":["1"]},"author_link":["1011942","1011938","1011945","1011950","1011951","1011952","1011946","1011948","1011939","1011949","1011944","1011940","1011943","1011941","1011947"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-10","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"3","bibliographicPageStart":"035006","bibliographicVolumeNumber":"33","bibliographic_titles":[{"bibliographic_title":"Journal of Physics: Condensed Matter"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Positronium formation at 4H SiC(0001) surfaces were investigated upon the removal of natural oxide layers by hydrofluoric acid etching and heat treatment at 1000 K in ultra-high vacuum. Two types of positronium were observed in the positronium time-of-flight (PsTOF) measurements irrespective of conduction type and surface polarity. One type formed the major part of the PsTOF spectrum with a maximum energy of 4.7 ± 0.3 eV. This energy exceeded the theoretical value calculated with valence electrons. The PsTOF spectrum shape was different from those of metal surfaces, suggesting that the surface state electrons or conduction electrons need to be considered as the positronium source. Another positronium appeared at 1000 K in the tail of the PsTOF spectrum with a maximum energy of 0.2–0.5 eV. This thermally-assisted\nathermal positronium may be formed via the surface state positrons and electrons.\n","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1088/1361-648X/abbe7a","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://iopscience.iop.org/article/10.1088/1361-648X/abbe7a","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0953-8984","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kawasuso, Atsuo"}],"nameIdentifiers":[{"nameIdentifier":"1011938","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"河裾"}],"nameIdentifiers":[{"nameIdentifier":"1011939","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wada, Ken"}],"nameIdentifiers":[{"nameIdentifier":"1011940","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"和田健"}],"nameIdentifiers":[{"nameIdentifier":"1011941","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyashita, Atsumi"}],"nameIdentifiers":[{"nameIdentifier":"1011942","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"宮下, 敦巳"}],"nameIdentifiers":[{"nameIdentifier":"1011943","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Maekawa, Masaki"}],"nameIdentifiers":[{"nameIdentifier":"1011944","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"前川, 雅樹"}],"nameIdentifiers":[{"nameIdentifier":"1011945","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"飯田, 進平"}],"nameIdentifiers":[{"nameIdentifier":"1011946","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"岩森, 大直"}],"nameIdentifiers":[{"nameIdentifier":"1011947","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"長嶋, 泰之"}],"nameIdentifiers":[{"nameIdentifier":"1011948","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Atsuo, Kawasuso","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1011949","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ken, Wada","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1011950","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Atsumi, Miyashita","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1011951","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Masaki, Maekawa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"1011952","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Positronium formation at 4H SiC(0001) surfaces","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Positronium formation at 4H SiC(0001) surfaces"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-10-27"},"publish_date":"2020-10-27","publish_status":"0","recid":"80816","relation_version_is_last":true,"title":["Positronium formation at 4H SiC(0001) surfaces"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T18:57:49.592066+00:00"}