@article{oai:repo.qst.go.jp:00080816,
 author = {Kawasuso, Atsuo and 河裾 and Wada, Ken and 和田健 and Miyashita, Atsumi and 宮下, 敦巳 and Maekawa, Masaki and 前川, 雅樹 and 飯田, 進平 and 岩森, 大直 and 長嶋, 泰之 and Atsuo, Kawasuso and Ken, Wada and Atsumi, Miyashita and Masaki, Maekawa},
 issue = {3},
 journal = {Journal of Physics: Condensed Matter},
 month = {Oct},
 note = {Positronium formation at 4H SiC(0001) surfaces were investigated upon the removal of natural oxide layers by hydrofluoric acid etching and heat treatment at 1000 K in ultra-high vacuum. Two types of positronium were observed in the positronium time-of-flight (PsTOF) measurements irrespective of conduction type and surface polarity. One type formed the major part of the PsTOF spectrum with a maximum energy of 4.7 ± 0.3 eV. This energy exceeded the theoretical value calculated with valence electrons. The PsTOF spectrum shape was different from those of metal surfaces, suggesting that the surface state electrons or conduction electrons need to be considered as the positronium source. Another positronium appeared at 1000 K in the tail of the PsTOF spectrum with a maximum energy of 0.2–0.5 eV. This thermally-assisted
athermal positronium may be formed via the surface state positrons and electrons.},
 title = {Positronium formation at 4H SiC(0001) surfaces},
 volume = {33},
 year = {2020}
}