{"created":"2023-05-15T14:59:12.873786+00:00","id":80342,"links":{},"metadata":{"_buckets":{"deposit":"0f69d96f-1b8f-48d1-963c-46bd9af6ce9a"},"_deposit":{"created_by":1,"id":"80342","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"80342"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00080342","sets":["1"]},"author_link":["899116","899121","899118","899120","899115","899122","899119","899117"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageStart":"054427","bibliographicVolumeNumber":"102","bibliographic_titles":[{"bibliographic_title":"PHYSICAL REVIEW B"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In this study, Gd ion implantation and annealing were performed at 900 ◦C for nominally undoped wurtzite GaN grown by metal-organic chemical vapor deposition. Spin-polarized positron annihilation measurements showed that vacancy clusters including at least 12 vacancies per cluster were the major positron-trapping centers and that the electrons in the vacancy clusters were spin-polarized. These observations could be explained by first-principles calculations. The previous speculation about the defect-assisted ferromagnetism of Gd-implanted GaN may be supported if vacancy clusters are considered.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.102.054427","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://journals.aps.org/prb/abstract/10.1103/PhysRevB.102.054427","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"2469-9950","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Maekawa, Masaki"}],"nameIdentifiers":[{"nameIdentifier":"899115","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyashita, Atsumi"}],"nameIdentifiers":[{"nameIdentifier":"899116","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakai, Seiji"}],"nameIdentifiers":[{"nameIdentifier":"899117","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawasuso, Atsuo"}],"nameIdentifiers":[{"nameIdentifier":"899118","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Maekawa, Masaki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"899119","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Miyashita, Atsumi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"899120","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakai, Seiji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"899121","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kawasuso, Atsuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"899122","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-08-20"},"publish_date":"2020-08-20","publish_status":"0","recid":"80342","relation_version_is_last":true,"title":["Gadolinium-implanted GaN studied by spin-polarized positron annihilation spectroscopy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T21:20:10.998226+00:00"}