@article{oai:repo.qst.go.jp:00080184,
 author = {Tien Son, Nguyen and Duy Ho, Quoc and Goto, Ken and Abe, Hiroshi and Ohshima, Takeshi and Monemar, Bo and Kumagai, Yoshinao and Frauenheim, Thomas and Deak, Peter and Abe, Hiroshi and Ohshima, Takeshi},
 issue = {3},
 journal = {Applied Physics Letters},
 month = {Jul},
 note = {we have investigated the electron paramagnetic resonance (EPR) center called as IR1 center in n-type unintentionally doped β-Ga2O3 after annealing in oxygen ambient at 1450 ℃ or electron irradiation. The center has an electron spin S=1/2 and shows an almost isotropic hyperfine (hf) interaction with the nuclear spins of two equivalent Ga atoms. Comparing the observed hf constant (~29 G for 69Ga) with the calculated hf parameters for the (2–) charge state of the Ga vacancy and its associated defect, VGa(I)-Gaib-VGa(I), and from their charge transition levels, the IR1 center is assigned to the double negative charge state of either the Ga vacancy at tetrahedral site, VGa(I)2−, or the VGa(I)-Gaib-VGa(I) complex.},
 title = {Electron paramagnetic resonance and theoretical study of gallium vacancy in beta-Ga2O3},
 volume = {117},
 year = {2020}
}