{"created":"2023-05-15T14:58:35.253902+00:00","id":79486,"links":{},"metadata":{"_buckets":{"deposit":"ac97c49b-4bb5-4788-ae19-a51c27a016a4"},"_deposit":{"created_by":1,"id":"79486","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"79486"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00079486","sets":["10:27"]},"author_link":["853395","853396"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-06-06","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Graphene is receiving great attention as one of the most promising materials for future spintronics due to their outstanding transport properties of spin-polarized charge carriers and two-dimensionality advantageous for nano-scale device applications. As a key research issue in developing graphene-based spintronic devices like magnetoresistance (MR) devices, spin transistors and spin logics, significant efforts have been made to improve the injection efficiency of spin-polarized carriers in graphene. However, the graphene-based devices consist of spin injection electrodes of ferromagnetic metals (FMs) (e.g., Co and NiFe alloy) studied so far revealed the low spin injection efficiency, i.e., the low spin polarization of injected carriers by direct contact via graphene/FM heterostructures and the high injection resistance by indirect contact via graphene/insulating barrier layer/FM heterostructures. One of the most effective ways to solve the problem of the low spin injection efficiency in graphene-based spintronic devices is the application of half-metals (HMs) with completely-high spin polarization (P~100%) at the Fermi level in place of conventional FMs with low spin polarization (P~30%). Recently, we for the first time demonstrated the fabrication of novel heterostructures of single layer graphene (SLG) and HMs, i.e., La1/3Sr2/3MnO3 (LSMO) and Co2FeGe0.5Ga0.5(CFGG), and revealed their spin-related electronic/magnetic properties by using the outermost surface sensitive and depth-resolved spin spectroscopy techniques. Herein we present the electronic states and spin polarization of graphene induced by the proximity effect in the SLG/LSMO heterostructure.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"2019 Collaborative Conference on Materials Research(CCMR)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakai, Seiji"}],"nameIdentifiers":[{"nameIdentifier":"853395","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakai, Seiji","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"853396","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Fabrication and spintronic properties of novel graphene/half-metal heterostructures","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fabrication and spintronic properties of novel graphene/half-metal heterostructures"}]},"item_type_id":"10005","owner":"1","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-03-17"},"publish_date":"2020-03-17","publish_status":"0","recid":"79486","relation_version_is_last":true,"title":["Fabrication and spintronic properties of novel graphene/half-metal heterostructures"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:22:18.025308+00:00"}