@article{oai:repo.qst.go.jp:00079469,
 author = {Kudo, Hiroto and Mari Fukunaga and Teppei Yamada and Shinji Yamakawa and Takeo Watanabe and Yamamoto, Hiroki and Kazumasa Okamoto and Hiroki, Yamamoto},
 issue = {6},
 journal = {Journal of Photopolymer Science and Technology},
 month = {Jan},
 note = {We examined the synthesis and resist properties of tellurium-containing molecular resist materials. By the condensation reaction of anisol, phenol, and 2-phenylphenol with tellurium tetrachloride (TeCl4), dichloro di(4-hydroxyphenyl) telluride (CHPT), dichloro di(4-hydroxy-3-phenylbenz) telluride (CHBT), di(4-hydroxyphenyl) telluride (HPT), and di(4-hydoxy-3-phenylbenz) telluride (HBT) were synthesized. These were reacted with 2-methyl-2-adamantyl bromo acetate, yielding corresponding compounds CHPT-AD, CHBT-AD, HPT-AD, and HBT-AD, respectively. By the examination of resist properties (thickness loss property, resist sensitivity, and etching durability), CHBT-AD could be good candidate for higher resolution EUV resist material.},
 pages = {805--810},
 title = {Synthesis and Property of Tellurium-Containing Molecular Resist Materials for Extreme Ultraviolet Lithography System},
 volume = {32},
 year = {2020}
}