{"created":"2023-05-15T14:58:15.923896+00:00","id":79035,"links":{},"metadata":{"_buckets":{"deposit":"6588800e-2742-432e-8ae9-078107576b6b"},"_deposit":{"created_by":1,"id":"79035","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"79035"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00079035","sets":["2"]},"author_link":["845036","845028","845033","845031","845039","845027","845034","845037","845038","845030","845029","845040","845032","845035"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2020-02","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"電気学会　電子デバイス研究会資料"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　原子力発電所での廃炉作業など、高線量環境で使用できる耐放射線性の半導体イメージセンサが求められている。そこで本研究では、従来のシリコン（Si）を用いた素子に比べバンドギャップが広く、耐放射線性に優れる炭化ケイ素（SiC）に着目し、イメージセンサを実現するための各種要素プロセス技術を開発した。さらに一画素紫外線（UV）イメージセンサを試作し、3 MGyのガンマ線照射後も正常に動作することを実証した。","subitem_description_type":"Abstract"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"845027","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"845028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"845029","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"845030","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"845031","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"845032","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"西垣内, 健汰"}],"nameIdentifiers":[{"nameIdentifier":"845033","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"長谷部, 史明"}],"nameIdentifiers":[{"nameIdentifier":"845034","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"目黒, 達也"}],"nameIdentifiers":[{"nameIdentifier":"845035","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"845036","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"845037","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"845038","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"845039","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"845040","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"炭化ケイ素半導体を用いた耐放射線性イメージセンサの開発","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"炭化ケイ素半導体を用いた耐放射線性イメージセンサの開発"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2020-02-12"},"publish_date":"2020-02-12","publish_status":"0","recid":"79035","relation_version_is_last":true,"title":["炭化ケイ素半導体を用いた耐放射線性イメージセンサの開発"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:37:29.014062+00:00"}