@article{oai:repo.qst.go.jp:00078466,
 author = {Entani, Shiro and V. Larionov, Konstantin and I. Popov, Zakhar and Takizawa, Masaru and Mizuguchi, Masaki and Watanabe, Hideo and Songtian, Li and Naramoto, Hiroshi and B Sorokin, Pavel and Sakai, Seiji and Shiro, Entani and Songtian, Li and Hiroshi, Naramoto and B Sorokin, Pavel and Seiji, Sakai},
 issue = {12},
 journal = {Nanotechnology},
 month = {Jan},
 note = {Two-dimensional materials such as hexagonal boron nitride (h-BN) and graphene have attracted wide attention in nanoelectronics and spintronics. Since their electronic characteristics are strongly affected by the local atomic structure, the heteroatom doping could allows us to tailor the electronic and physical properties of two-dimensional materials. In this study, a non-chemical method of heteroatom doping into h-BN under high-energy ion irradiation was demonstrated for the LiF/h-BN/Cu heterostructure. Spectroscopic analysis of chemical states on the relevant atoms revealed that 6  2% fluorinated h¬-BN are obtained by the irradiation of 2.4 MeV Cu2+ ions with the fluence up to 1014 ions/cm2. It was shown that the high-energy ion irradiation leads to a single-sided fluorination of h-BN by the formation of the fluorinated sp3-hybridized BN.},
 title = {Non-chemical fluorination of hexagonal boron nitride by high-energy ion irradiation},
 volume = {31},
 year = {2020}
}