@article{oai:repo.qst.go.jp:00078336,
 author = {P. Anderson, Christopher and Bourassa, Alexandre and C. Miao, Kevin and Wolfowicz, Gary and J. Mintun, Peter and L. Crook, Alexander and Abe, Hiroshi and Ul Hassan, Jawad and T. Son, Nguyen and Ohshima, Takeshi and D. Awschalom, David and Hiroshi, Abe and Takeshi, Ohshima},
 journal = {Science},
 month = {Dec},
 note = {Spin defects in silicon carbide have the advantage of exceptional electron spin coherence combined with a near-infrared spin-photon interface, all in a material amenable to modern semiconductor fabrication. Leveraging these advantages, we integrated highly coherent single neutral divacancy spins in commercially available p-i-n structures and fabricated diodes to modulate the local electrical
environment of the defects. These devices enable deterministic charge-state control and broad Stark-shift tuning exceeding 850 gigahertz. We show that charge depletion results in a narrowing of the optical linewidths by more than 50-fold, approaching the lifetime limit. These results demonstrate a method for mitigating the ubiquitous problem of spectral diffusion in solid-state emitters by
engineering the electrical environment while using classical semiconductor devices to control scalable, spin-based quantum systems.},
 pages = {1225--1230},
 title = {Electrical and optical control of single spins integrated in scalable semiconductor devices},
 volume = {366},
 year = {2019}
}