@misc{oai:repo.qst.go.jp:00078277,
 author = {Tatsuishi, Tetsuya and Sonoda, Takahiro and J. Buendia, Jorge and Kageura, Taisuke and Ishii, Yu and Nagaoka, Kiro and Hata, Yuki and Kawakatsu, Kazuto and Tanii, Takashi and Haruyama, Moriyoshi and Onoda, Shinobu and Stacey, Alastair and Teraji, Tokuyuki and Isoya, Junichi and Kono, Shozo and Kawarada, Hiroshi and Onoda, Shinobu},
 month = {Dec},
 note = {Nitrogen vacancy (NV) center in diamond is expected as a magnetic sensor with high sensitivity at room temperature and single NV center succeeded in detecting 1H spins out of the substrate. For improvement magnetic sensitivity, both shallow and aligned NV ensemble is required since the magnetic sensitivity is inversely proportional to the root of number of NV centers contributing to the measurement. Delta-doping of N was tried by diamond growth on N-terminated (001) diamond and estimated 2D concentration of NV centers was 1 x 1011 cm-2. This method can control the depth of NV ensemble precisely unlike ion implantation or N-doped layer which are popular methods to fabricate NV ensemble. However, NV centers in (001) delta doped layer would be not aligned because possibility of each four sites adjacent to N becoming a vacancy are equivalent. In the case of (111) delta doping layer, NV centers will be aligned because a top site is more preferable to become a vacancy than other three equivalent sites. Recently, we established the method to fabricate N-terminated diamond with high coverage causing no damage on the surface [5, 6]. We partially succeeded to make aligned two-dimensional NV ensemble from N-terminated (111) diamond with half mono layer coverage embedded by high purity (111) diamond film., 2019 Materials Research Society Fall Meeting & Exhibit},
 title = {Aligned Two-Dimensional NV Ensemble Fabrication from (111) Nitrogen-Terminated Surface Embedded by High Purity Diamond},
 year = {2019}
}