{"created":"2023-05-15T14:57:25.745826+00:00","id":77933,"links":{},"metadata":{"_buckets":{"deposit":"55fe2e73-fc0b-477c-9286-3eadc39b5507"},"_deposit":{"created_by":1,"id":"77933","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77933"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077933","sets":["10:28"]},"author_link":["842352","842353"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-12-04","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Siに変わる高性能かつ高耐放射線性(イオン入射破壊耐性)半導体材料として期待されているSiC-MOSFETに対しイオン照射を行い、その破壊耐性を評価した。\n評価対象は産総研製IE-MOSFETと、それと同程度の性能を持つWOLFSPEED社の市販SiC MOSFETとし、それぞれのイオン照射後のリーク電流をモニタすることで，イオン誘起破壊耐性を比較した。\n","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会第6回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"842352","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"842353","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"量産SiC-MOSFETにおける超高エネルギーイオン誘起破壊耐性の評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"量産SiC-MOSFETにおける超高エネルギーイオン誘起破壊耐性の評価"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-12-11"},"publish_date":"2019-12-11","publish_status":"0","recid":"77933","relation_version_is_last":true,"title":["量産SiC-MOSFETにおける超高エネルギーイオン誘起破壊耐性の評価"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:42:39.729344+00:00"}