{"created":"2023-05-15T14:57:23.097002+00:00","id":77876,"links":{},"metadata":{"_buckets":{"deposit":"27f306a5-6a4c-41b5-a791-44bece986f2f"},"_deposit":{"created_by":1,"id":"77876","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77876"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077876","sets":["10:28"]},"author_link":["812930","812927","812935","812929","812931","812936","812934","812928","812926","812924","812932","812933","812925"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-12-10","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":" 従来の平面構造トランジスタでは困難であった、10～サブ10nmオーダの微細化および高集積化を可能にする3次元ゲート構造トランジスタ（FinFET）を用いて、メモリ素子(SRAM（Static random access memory)）を試作し、シングルイベント現象による特性変化を調べた。線幅14/16nmで試作したFinFET SRAMに対し、イオン種、メモリ駆動電圧及び素子への重イオンの入射角度を変えて照射を行った。FinFET SRAMでは、複数のメモリセルのビットが反転するマルチセルアップセットが発生し、またその挙動が重イオンの飛程（レンジ）に依存せず、照射前の書き込み値に依存することを明らかにした。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"QST高崎サイエンスフェスタ2019","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"竹内, 浩造 "}],"nameIdentifiers":[{"nameIdentifier":"812924","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"行松, 和輝 "}],"nameIdentifiers":[{"nameIdentifier":"812925","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"加藤,    貴志 "}],"nameIdentifiers":[{"nameIdentifier":"812926","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"坂本, 敬太"}],"nameIdentifiers":[{"nameIdentifier":"812927","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土屋, 佑太"}],"nameIdentifiers":[{"nameIdentifier":"812928","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"渡部, 杏太"}],"nameIdentifiers":[{"nameIdentifier":"812929","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"松山, 英也 "}],"nameIdentifiers":[{"nameIdentifier":"812930","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"812931","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"812932","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"久保山, 智司 "}],"nameIdentifiers":[{"nameIdentifier":"812933","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"新藤, 浩之 "}],"nameIdentifiers":[{"nameIdentifier":"812934","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"812935","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"812936","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"FinFET SRAMにおけるシングルイベント効果","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"FinFET SRAMにおけるシングルイベント効果"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-12-04"},"publish_date":"2019-12-04","publish_status":"0","recid":"77876","relation_version_is_last":true,"title":["FinFET SRAMにおけるシングルイベント効果"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:31:29.171236+00:00"}