{"created":"2023-05-15T14:57:20.118763+00:00","id":77807,"links":{},"metadata":{"_buckets":{"deposit":"576c5da8-80e2-414a-8ae8-6ae8e4a15c04"},"_deposit":{"created_by":1,"id":"77807","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77807"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077807","sets":["10:28"]},"author_link":["822777","822776","822781","822782","822773","822774","822778","822780","822779","822775"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-12-04","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"　4H-SiC中における電子を1個捕獲した窒素・空孔複合欠陥（SiC-NVセンター）は量子センサとしての応用が期待されているが、その効率的な形成条件については明らかになっていない。本研究では、不純物窒素濃度が異なる4H-SiCエピタキシャル膜に対し、様々な条件でのイオンビーム照射を行い、室温および80 Kでのフォトルミネッセンス測定を行い、SiC-NVセンターの形成量を評価した。その結果、不純物窒素濃度、欠陥導入量の変化によるSiC-NVセンター起因の発光強度の変化を系統的に明らかにすることができた。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会　第6回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"楢原, 拓真"}],"nameIdentifiers":[{"nameIdentifier":"822773","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"822774","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"児島, 一聡"}],"nameIdentifiers":[{"nameIdentifier":"822775","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"822776","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"822777","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"822778","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narahara, Takuma","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822779","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822780","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822781","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822782","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-11-15"},"publish_date":"2019-11-15","publish_status":"0","recid":"77807","relation_version_is_last":true,"title":["4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:15:56.107060+00:00"}