{"created":"2023-05-15T14:57:17.582994+00:00","id":77749,"links":{},"metadata":{"_buckets":{"deposit":"200ccc37-3a9a-4b87-aaaa-93a830552a45"},"_deposit":{"created_by":1,"id":"77749","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77749"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077749","sets":["10:28"]},"author_link":["810780","810778","810786","810781","810787","810782","810783","810777","810785","810779","810784"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-12-04","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"  ノーマリーオフ型の炭化ケイ素接合型電解効果トランジスタ (SiC JFET) は、ゲート酸化膜を持たず、ガンマ線照射によるしきい値電圧(Vth)シフトが小さい耐放射線性素子として期待されている。そこで5.6MGy(H2O)までガンマ線を照射し、電気特性劣化を調べた。照射後もVthの顕著なシフトは見られず、正常にトランジスタ動作することを確認した。また線量の増加により、バルク/SiO2界面を流れるリーク電流が増加することを明らかにした。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"先進パワー半導体分科会 第6回講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"810777","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"清水, 奎吾"}],"nameIdentifiers":[{"nameIdentifier":"810778","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"810779","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"810780","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"810781","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"黒木, 伸一郎"}],"nameIdentifiers":[{"nameIdentifier":"810782","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"田中, 保宣"}],"nameIdentifiers":[{"nameIdentifier":"810783","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"810784","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"810785","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"810786","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"810787","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"ノーマリーオフ型4H-SiC JFETのガンマ線耐性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ノーマリーオフ型4H-SiC JFETのガンマ線耐性"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-11-28"},"publish_date":"2019-11-28","publish_status":"0","recid":"77749","relation_version_is_last":true,"title":["ノーマリーオフ型4H-SiC JFETのガンマ線耐性"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:34:21.655139+00:00"}