@misc{oai:repo.qst.go.jp:00077614,
 author = {Sato, Shinichiro and Deki, Manato and Nishimura, Tomoaki and Okada, Hiroshi and Ohshima, Takeshi and Sato, Shinichiro and Ohshima, Takeshi},
 month = {Nov},
 note = {In this study, we investigate the photoluminescence (PL) properties of implanted Praseodymium (Pr) ions into GaN at temperatures up to 1200 oC to clarify the effect of implantation temperature on the Pr3+ activation., 23rd International Workshop on Inelastic Ion-Surface Collisions},
 title = {Photoluminescence Properties of Implanted Praseodymium into Gallium Nitride at Elevated Temperature},
 year = {2019}
}