{"created":"2023-05-15T14:57:11.543487+00:00","id":77611,"links":{},"metadata":{"_buckets":{"deposit":"50aaae2a-2ad4-490e-8034-ad533934c2ee"},"_deposit":{"created_by":1,"id":"77611","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77611"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077611","sets":["10:29"]},"author_link":["822768","822771","822770","822763","822769","822772","822766","822765","822767","822764"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-09-20","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"炭化ケイ素中の窒素・空孔複合欠陥（SiC-NVセンター）は、生体透過性が極めて高い1300nm付近の発光を室温で示し、電子スピン（スピン量子数S=1）を持つことから、生命科学や医療分野における量子センシング（局所領域の高感度磁場・温度計測）への応用が期待され居る。しかし、量子センシングの実証に不可欠となる室温での光学的なスピン状態の検出（光検出磁気共鳴(ODMR)など）は報告されていない。その理由の一つとして、現状ではSiC-NVセンターの形成条件や形成量の制御方法に関して未解明な部分が多く、SiC-NVセンターを高密度に形成する方法が明らかにされていないことが挙げられる。そこで本研究では、SiC-NVセンター密度の高濃度化を目的に不純物窒素(N)濃度の異なる4H-SiCにイオンビーム照射と熱処理を行い、N濃度がSiC-NVセンターに及ぼす影響をフォトルミネッセンス測定を用いて調査した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第80回応用物理学会秋季学術講演会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"楢原, 拓真"}],"nameIdentifiers":[{"nameIdentifier":"822763","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"822764","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"児島, 一聡"}],"nameIdentifiers":[{"nameIdentifier":"822765","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"山崎, 雄一"}],"nameIdentifiers":[{"nameIdentifier":"822766","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"土方, 泰斗"}],"nameIdentifiers":[{"nameIdentifier":"822767","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"822768","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narahara, Takuma","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822769","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822770","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822771","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"822772","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-11-15"},"publish_date":"2019-11-15","publish_status":"0","recid":"77611","relation_version_is_last":true,"title":["4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:15:57.771962+00:00"}