{"created":"2023-05-15T14:57:11.141500+00:00","id":77602,"links":{},"metadata":{"_buckets":{"deposit":"8bffdd5a-dcc9-4d34-a33f-44946dcb21cf"},"_deposit":{"created_by":1,"id":"77602","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"77602"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00077602","sets":["10:28"]},"author_link":["805313","805310","805312","805311","805314","805309"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-11-20","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"InGaN(窒化インジウムガリウム)/GaN(窒化ガリウム)多重量子井戸構造は、緑、黄色領域の発光デバイスとして期待されているが、高In組成のInGaNはGaNとの格子不整合が大きく、転位が発生しやすい[1]。そこで、転位の発生を抑制するために、ナノワイヤ構造が注目されている[2][3]。InGaN/GaN多重量子井戸ナノワイヤからの発光にはInGaN層の歪みやIn組成の均一性、積層数が深く関係しており、InGaN/GaN多重量子井戸の積層数、成長温度の最適化が必要である。そこで、本研究はInGaN層の歪み、In組成の均一性の積層数依存性、成長温度依存性を評価するために、20周期InGaN/GaN多重量子井戸ナノワイヤ成長中の放射光その場X線回折を適用した。","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第2回結晶工学×ISYSE合同研究会","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"杉谷, 寛弥"}],"nameIdentifiers":[{"nameIdentifier":"805309","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"805310","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"805311","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugitani, Kanya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"805312","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"805313","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"805314","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"放射光その場X線回折によるInGaN/GaN多重量子井戸ナノワイヤの構造評価","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"放射光その場X線回折によるInGaN/GaN多重量子井戸ナノワイヤの構造評価"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-11-25"},"publish_date":"2019-11-25","publish_status":"0","recid":"77602","relation_version_is_last":true,"title":["放射光その場X線回折によるInGaN/GaN多重量子井戸ナノワイヤの構造評価"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:40:42.648004+00:00"}